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| 2SJ668 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOSIII) 2SJ668 Relay Drive, DC/DC Converter and Motor Drive Applications 4 V gate drive Low drain-source ON-resistance: RDS (ON) = 0.12 (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.) Low leakage current: IDSS = -100 A (max) (VDS = -60 V) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current Drain power dissipation Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating -60 -60 20 -5 -20 20 40.5 -5 2 150 -55~150 Unit V V V A A W mJ A mJ C C Pulse (Note 1) JEDEC JEITA TOSHIBA SC-64 2-7B1B Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristic Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 6.25 125 Unit C / W C / W JEDEC JEITA TOSHIBA SC-64 2-7J1B Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: VDD = -25 V, Tch = 25C (initial), L = 2.2 mH, RG = 25 , IAR = -5 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. Weight: 0.35 g (typ.) 1 2006-11-17 2SJ668 Electrical Characteristics (Ta = 25C) Characteristic Gate leakage current Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton tf toff Qg Qgs Qgd VDD -48 V, VGS = -10 V, ID = -5 A Duty < 1%, tw = 10 s = 0V VGS -10 V 4.7 Switching time RL = 12 VDD -30 V - -- -- -- -- 95 15 11 4 -- -- -- -- nC -- 24 -- ns ID = -2.5 A Output Test Condition VGS = 16 V, VDS = 0 V VDS = -60 V, VGS = 0 V ID = -10 mA, VGS = 0 V ID = -10 mA, VGS = 20 V VDS = -10 V, ID = -1 mA VGS = -4 V, ID = -2.5 A VGS = -10 V, ID = -2.5 A VDS = -10 V, ID = -2.5 A Min -- -- -60 -35 -0.8 -- -- 2.5 -- Typ. -- -- -- -- -- 0.16 0.12 5.0 700 60 90 14 Max 10 -100 -- -- -2.0 0.25 0.17 -- -- -- -- -- Unit A A V V V S VDS = -10 V, VGS = 0 V, f = 1 MHz -- -- -- pF Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("Miller") charge -- 14 -- Source-Drain Ratings and Characteristics (Ta = 25C) Characteristic Continuous drain reverse current (Note 1) Pulse drain reverse current (Note 1) Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition -- -- IDR = -5 A, VGS = 0 V IDR = -5 A, VGS = 0 V dlDR / dt = 50 A / S Min -- -- -- -- -- Typ. -- -- -- 40 32 Max -5 -20 1.7 -- -- Unit A A V ns nC Marking J668 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-17 2SJ668 ID - VDS -5 -8 -10 -6 -4. -3.5 Common source Tc = 25C Pulse test -10 -10 -8 -6 -4 ID - VDS Common source Tc = 25C Pulse test -3.5 -6 -4 (A) ID -3 -2.8 -2 VGS = -2.5V -1 Drain current Drain current ID (A) -4 -3 -8 -3 -2 VGS = -2.5 V 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 0 0 -2 -4 -6 -8 -10 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS -10 -2.0 VDS - VGS VDS (V) Common source Tc = 25C Pulse test ID (A) -8 Common source VDS = -10 V Pulse test -1.6 Drain current 25 -4 Drain-source voltage -6 -1.2 -0.8 -5 -0.4 -2.5 ID = -1.2 A 0 0 -4 -8 -12 -16 -20 -2 100 Tc = -55C 0 0 -1 -2 -3 -4 -5 Gate-source voltage VGS (V) Gate-source voltage VGS (V) Yfs - ID (S) 100 Common source VDS = -10 V Pulse test 0.5 Common source Tc = 25C Pulse test RDS (ON) - ID Yfs Drain-source ON-resistance RDS (ON) () 0.4 Forward transfer admittance 10 Tc = -55C 100 25 0.3 0.2 -4 V 1 0.1 VGS = -10V 0.1 -0.1 -1 -10 -100 0 0 -2 -4 -6 -8 -10 Drain current ID (A) Drain current ID (A) 3 2006-11-17 2SJ668 RDS (ON) - Tc -0.4 Common source Pulse test 10 Common source Tc = 25C Pulse test IDR - VDS -5 -10 Drain-source ON-resistance RDS (ON) () -2.5 -1.2 -0.2 VGS = -4 V -1.2 -0.1 VGS = -10 V 0 -80 -2.5 -5 Drain reverse current IDR -0.3 ID = -5 A (A) -3 1 -1 VGS = 0 V 0.1 -40 0 40 80 120 160 0 0.2 0.4 0.6 0.8 1.0 1.2 Case temperature Tc (C) Drain-source voltage VDS (V) Capacitance - VDS 10000 Common source f = 1 MHz Vth - Tc -2.0 Tc = 25C 1000 Ciss Vth (V) VGS = 0 V (pF) -1.6 Common source VDS = -10 V ID = 1 mA Pulse test C Gate threshold voltage -100 -1.2 Capacitance 100 Coss -0.8 Crss 10 -0.1 -0.4 -1 -10 0 -80 -40 0 40 80 120 160 Drain-source voltage VDS (V) Case temperature Tc (C) PD - Tc 40 Dynamic input/output characteristics -50 VDS -25 ID = -5 A -40 Ta = 25C Pulse test -30 -15 (W) VDS (V) 30 Drain power dissipation 20 Drain-source voltage -20 -12V -24V -10 10 -10 VGS 0 0 5 10 VDD = -48 V -5 0 0 40 80 120 160 200 15 20 25 30 0 Case temperature Tc (C) Total gate charge Qg (nC) 4 2006-11-17 Gate-source voltage VGS -20 PD (V) Common source 2SJ668 rth - tw 10 Normalized transient thermal impedance rth (t)/Rth (ch-c) 1 Duty = 0.5 0.2 0.1 Single Pulse PDM 0.05 0.02 0.01 t T Duty = t/T Rth (ch-c) = 6.25C/W 100 1m 10 m 100 m 1 10 0.1 0.01 10 Pulse width tw (s) Safe operating area -100 50 EAS - Tch Avalanche energy EAS (mJ) ID max (pulsed) * 40 Drain current ID (A) -10 ID max (continuous) DC operation Tc = 25C 1 ms * 100 s * 30 20 -1 *: Single nonrepetitive pulse Tc = 25C Curves must be derated linearly with increase in temperature. 10 VDSS max -10 -100 -0.1 -0.1 0 25 50 75 100 125 150 -1 Channel temperature (initial) Tch (C) Drain-source voltage VDS (V) 0V -15 V BVDSS IAR VDD Test circuit VDS Waveform AS = 1 B VDSS L I2 B 2 VDSS - VDD RG = 25 VDD = -25 V, L = 2.2 mH 5 2006-11-17 2SJ668 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-17 |
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